Vishay E Type N-Channel MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247 SIHG20N50E-GE3

Vishay E Type N-Channel MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247 SIHG20N50E-GE3

Manufacturer:
Manufacturer Part No:
SIHG20N50E-GE3
Enrgtech Part No:
ET13923050
Warranty:
Manufacturer
$ 3.26 $ 3.26
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
19A
Maximum Drain Source Voltage Vds:
500V
Series:
E
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
180mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
46nC
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
-1.2V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
179W
Maximum Operating Temperature:
150°C
Height:
20.82mm
Length:
15.87mm
Standards/Approvals:
No
Width:
5.31 mm
Automotive Standard:
No
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0900766b814fc55f.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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