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si4559ady-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3
si4559ady-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3
si4559ady-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4559ADY-T1-GE3
Enrgtech Part No:
ET13923025
Warranty:
Manufacturer
$ 2.58 $ 2.58
Checking for live stock
Channel Type:
Type P, Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
850nm
Maximum Drain Source Voltage Vds:
60V
Series:
TrenchFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
72mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
3.4W
Typical Gate Charge Qg @ Vgs:
ROX3S
Maximum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Standards/Approvals:
No
Height:
1.5mm
Width:
4 mm
Length:
5mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b80ed1ef9.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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