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si2301cds-t1-ge3 Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
si2301cds-t1-ge3 Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
si2301cds-t1-ge3 Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3

Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3

Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2301CDS-T1-GE3
Enrgtech Part No:
ET13923017
Warranty:
Manufacturer
$ 0.44 $ 0.44
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
2.3A
Maximum Drain Source Voltage Vds:
20V
Series:
Si2301CDS
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
112mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
2.9 x 1.3 x 0.9mm
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-1.2V
Maximum Gate Source Voltage Vgs:
8 V
Maximum Power Dissipation Pd:
860mW
Maximum Operating Temperature:
150°C
Height:
1.02mm
Length:
3.04mm
Standards/Approvals:
No
Width:
1.4 mm
Automotive Standard:
No
pdf icon
0900766b80ed1e5c.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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