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si4850ey-t1-ge3 Vishay Si4850EY Type N-Channel MOSFET, 8.5 A, 60 V Enhancement, 8-Pin SOIC SI4850EY-T1-GE3
si4850ey-t1-ge3 Vishay Si4850EY Type N-Channel MOSFET, 8.5 A, 60 V Enhancement, 8-Pin SOIC SI4850EY-T1-GE3
si4850ey-t1-ge3 Vishay Si4850EY Type N-Channel MOSFET, 8.5 A, 60 V Enhancement, 8-Pin SOIC SI4850EY-T1-GE3

Vishay Si4850EY Type N-Channel MOSFET, 8.5 A, 60 V Enhancement, 8-Pin SOIC SI4850EY-T1-GE3

Vishay Si4850EY Type N-Channel MOSFET, 8.5 A, 60 V Enhancement, 8-Pin SOIC SI4850EY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4850EY-T1-GE3
Enrgtech Part No:
ET13883954
Warranty:
Manufacturer
$ 1.70 $ 1.70
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8.5A
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOIC
Series:
Si4850EY
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
SCOTCH 101E
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
3.3W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
18nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Height:
1.5mm
Width:
4 mm
Length:
5mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8126ce33.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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