Infineon HEXFET Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF

Infineon HEXFET Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF

Manufacturer:
Manufacturer Part No:
IRF7832TRPBF
Enrgtech Part No:
ET13874928
Warranty:
Manufacturer
$ 0.87 $ 0.87
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
30V
Series:
HEXFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
4.8mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2.5W
Typical Gate Charge Qg @ Vgs:
34nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
155°C
Length:
5mm
Height:
1.5mm
Width:
4 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8132f4d2.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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