Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRFB3077PBF
Enrgtech Part No:
ET13874921
Warranty:
Manufacturer
$ 2.81 $ 2.81
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
210A
Maximum Drain Source Voltage Vds:
75V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
3mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
160nC
Maximum Power Dissipation Pd:
370W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
4.82 mm
Height:
9.02mm
Length:
10.66mm
Standards/Approvals:
No
Automotive Standard:
No
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0900766b814b7aa9.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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