Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205PBF

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205PBF

Manufacturer:
Manufacturer Part No:
IRF3205PBF
Enrgtech Part No:
ET13874425
Warranty:
Manufacturer
$ 1.43 $ 1.43
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
110A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
8mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
200W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
146nC
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Height:
8.77mm
Standards/Approvals:
No
Width:
4.69 mm
Length:
10.54mm
Distrelec Product Id:
30341274
Automotive Standard:
No
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0900766b807910e2.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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