Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-262

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-262

Manufacturer:
Manufacturer Part No:
IRF540NLPBF
Enrgtech Part No:
ET13874419
Warranty:
Manufacturer
$ 1.62 $ 1.62
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
2.42mm
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-262
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
44mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
380mV
Typical Gate Charge Qg @ Vgs:
71nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Height:
9.65mm
Standards/Approvals:
No
Length:
10.67mm
Width:
EH Connector Housing
Automotive Standard:
No
pdf icon
0900766b8147753c.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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