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sia447dj-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
sia447dj-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIA447DJ-T1-GE3
Enrgtech Part No:
ET13837167
Warranty:
Manufacturer
$ 0.37 $ 0.37
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
12V
Series:
TrenchFET
Package Type:
SC-70
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
71mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
52nC
Maximum Gate Source Voltage Vgs:
8 V
Maximum Power Dissipation Pd:
19W
Forward Voltage Vf:
-1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Width:
1.7 mm
Standards/Approvals:
No
Length:
1.7mm
Height:
0.8mm
Automotive Standard:
No
pdf icon
0900766b8126ceaf.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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