Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRFB3607PBF
Enrgtech Part No:
ET13831034
Warranty:
Manufacturer
$ 1.07 $ 1.07
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
75V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
9mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
140W
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
56nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Height:
9.02mm
Standards/Approvals:
No
Length:
10.66mm
Width:
4.82 mm
Automotive Standard:
No
pdf icon
0900766b81384945.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews