Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin TO-252 IRFR120NTRLPBF

Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin TO-252 IRFR120NTRLPBF

Manufacturer:
Manufacturer Part No:
IRFR120NTRLPBF
Enrgtech Part No:
ET13809225
Warranty:
Manufacturer
$ 0.52 $ 0.52
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
9.4A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
210mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
48W
Typical Gate Charge Qg @ Vgs:
25nC
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
Lead-Free
Height:
2.39mm
Width:
6.22 mm
Length:
6.73mm
Automotive Standard:
No
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0900766b8132f4fe.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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