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sihf30n60e-ge3 Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3
sihf30n60e-ge3 Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3
sihf30n60e-ge3 Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiHF30N60E-GE3
Enrgtech Part No:
ET13802973
Warranty:
Manufacturer
$ 2.90 $ 2.90
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
29A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-220
Series:
E
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
125mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
37W
Typical Gate Charge Qg @ Vgs:
85nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
150°C
Width:
EH Connector Housing
Height:
16.12mm
Length:
10.63mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8145c114.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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