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irf5210strlpbf Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 IRF5210STRLPBF
irf5210strlpbf Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 IRF5210STRLPBF
irf5210strlpbf Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 IRF5210STRLPBF

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 IRF5210STRLPBF

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 IRF5210STRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF5210STRLPBF
Enrgtech Part No:
ET13801042
Warranty:
Manufacturer
$ 2.49 $ 2.49
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
38A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
60mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
150nC
Forward Voltage Vf:
-1.6V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
170W
Maximum Operating Temperature:
150°C
Length:
10.67mm
Standards/Approvals:
No
Height:
4.83mm
Width:
9.65 mm
Distrelec Product Id:
304-44-445
Automotive Standard:
No
pdf icon
0900766b813418c7.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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