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irfp4668pbf Infineon HEXFET Type N-Channel MOSFET, 130 A, 200 V Enhancement, 3-Pin TO-247 IRFP4668PBF
irfp4668pbf Infineon HEXFET Type N-Channel MOSFET, 130 A, 200 V Enhancement, 3-Pin TO-247 IRFP4668PBF
irfp4668pbf Infineon HEXFET Type N-Channel MOSFET, 130 A, 200 V Enhancement, 3-Pin TO-247 IRFP4668PBF

Infineon HEXFET Type N-Channel MOSFET, 130 A, 200 V Enhancement, 3-Pin TO-247 IRFP4668PBF

Infineon HEXFET Type N-Channel MOSFET, 130 A, 200 V Enhancement, 3-Pin TO-247 IRFP4668PBF

Manufacturer:
Infineon
Manufacturer Part No:
IRFP4668PBF
Enrgtech Part No:
ET13801039
Warranty:
Manufacturer
$ 5.44 $ 5.44
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
130A
Maximum Drain Source Voltage Vds:
200V
Package Type:
TO-247
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
10mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
520W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
161nC
Maximum Operating Temperature:
175°C
Width:
5.31 mm
Length:
15.87mm
Height:
20.7mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80dcb1e1.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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