IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2

IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2

Manufacturer:
Manufacturer Part No:
IXFN150N65X2
Enrgtech Part No:
ET12277005
Warranty:
Manufacturer
$ 51.99 $ 51.99
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
145A
Maximum Drain Source Voltage Vds:
650V
Package Type:
SOT-227
Series:
HiperFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
STP
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.4V
Maximum Power Dissipation Pd:
1.04kW
Maximum Gate Source Voltage Vgs:
30 V
Typical Gate Charge Qg @ Vgs:
335nC
Maximum Operating Temperature:
150°C
Height:
9.6mm
Length:
38.23mm
Width:
25.07 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b815e9d2d.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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