Texas Instruments NexFET Type N-Channel MOSFET, 273 A, 80 V Enhancement, 3-Pin TO-220 CSD19506KCS

Texas Instruments NexFET Type N-Channel MOSFET, 273 A, 80 V Enhancement, 3-Pin TO-220 CSD19506KCS

Manufacturer:
Manufacturer Part No:
CSD19506KCS
Enrgtech Part No:
ET12227839
Warranty:
Manufacturer
$ 6.55 $ 6.55
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
273A
Maximum Drain Source Voltage Vds:
80V
Series:
NexFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.8mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
375W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
120nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
175°C
Height:
16.51mm
Standards/Approvals:
No
Length:
10.67mm
Width:
4.7 mm
Automotive Standard:
No
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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