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ixfn200n10p IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227
ixfn200n10p IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227

IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227

IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227

Manufacturer:
IXYS
Manufacturer Part No:
IXFN200N10P
Enrgtech Part No:
ET12012310
Warranty:
Manufacturer
$ 27.39 $ 27.39
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
200A
Maximum Drain Source Voltage Vds:
100V
Package Type:
SOT-227
Series:
Polar HiPerFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
7.5mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
235nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
680W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.5V
Maximum Operating Temperature:
175°C
Width:
25.07 mm
Length:
38.23mm
Height:
9.6mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8157c9dc.pdf(datasheets)
pdf icon
0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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