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ixfn360n10t IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227
ixfn360n10t IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227

IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227

IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227

Manufacturer:
IXYS
Manufacturer Part No:
IXFN360N10T
Enrgtech Part No:
ET11915247
Warranty:
Manufacturer
$ 30.82 $ 30.82
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
360A
Maximum Drain Source Voltage Vds:
100V
Package Type:
SOT-227
Series:
GigaMOS Trench HiperFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
2.6mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
525nC
Maximum Power Dissipation Pd:
830W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
25.07 mm
Standards/Approvals:
No
Height:
9.6mm
Length:
38.23mm
Automotive Standard:
No
pdf icon
0900766b8157c9b9.pdf(datasheets)
pdf icon
0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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