Texas Instruments NexFET Type N-Channel MOSFET, 272 A, 100 V Enhancement, 3-Pin TO-263 CSD19536KTTT

Texas Instruments NexFET Type N-Channel MOSFET, 272 A, 100 V Enhancement, 3-Pin TO-263 CSD19536KTTT

Manufacturer:
Manufacturer Part No:
CSD19536KTTT
Enrgtech Part No:
ET11873209
Warranty:
Manufacturer
$ 5.63 $ 5.63
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
272A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-263
Series:
NexFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.8mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
0010
Maximum Power Dissipation Pd:
375W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
9.65 mm
Height:
4.83mm
Length:
10.67mm
Automotive Standard:
No
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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