IXYS Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227

IXYS Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227

Manufacturer:
Manufacturer Part No:
IXFN60N80P
Enrgtech Part No:
ET11749452
Warranty:
Manufacturer
$ 41.59 $ 41.59
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
53A
Maximum Drain Source Voltage Vds:
800V
Package Type:
SOT-227
Mount Type:
Panel
Pin Count:
4
Maximum Drain Source Resistance Rds:
140mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
1.04kW
Typical Gate Charge Qg @ Vgs:
250nC
Forward Voltage Vf:
1.5V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
38.23mm
Height:
9.6mm
Standards/Approvals:
No
Width:
25.42 mm
Automotive Standard:
No
pdf icon
0900766b80a3c588.pdf(datasheets)
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0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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