IXYS Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3

IXYS Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3

Manufacturer:
Manufacturer Part No:
IXFN210N30P3
Enrgtech Part No:
ET11320757
Warranty:
Manufacturer
$ 40.51 $ 40.51
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
192A
Maximum Drain Source Voltage Vds:
300V
Package Type:
SOT-227
Mount Type:
Panel
Pin Count:
4
Maximum Drain Source Resistance Rds:
14.5mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1.5kW
Typical Gate Charge Qg @ Vgs:
268nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.5V
Maximum Operating Temperature:
150°C
Height:
9.6mm
Length:
38.23mm
Standards/Approvals:
No
Width:
25.07 mm
Automotive Standard:
No
pdf icon
0900766b812e6323.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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