STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK

STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK

Manufacturer:
Manufacturer Part No:
STH12N120K5-2
Enrgtech Part No:
ET11002016
Warranty:
Manufacturer
$ 8.25 $ 8.25
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
1200V
Series:
STB37N60
Package Type:
H2PAK
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
690mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.5V
Typical Gate Charge Qg @ Vgs:
44.2nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
250W
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Width:
15.8 mm
Standards/Approvals:
No
Height:
4.8mm
Length:
10.4mm
Automotive Standard:
No
pdf icon
A700000008302976.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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