IXYS Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-263

IXYS Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
IXFA22N65X2
Enrgtech Part No:
ET10984004
Warranty:
Manufacturer
$ 3.28 $ 3.28
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
22A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
145mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
37nC
Forward Voltage Vf:
1.4V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
390W
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
10.41mm
Height:
4.83mm
Width:
11.05 mm
Automotive Standard:
No
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0900766b814a82ce.pdf(datasheets)
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0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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