Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF

Manufacturer:
Manufacturer Part No:
IRLML0060TRPBF
Enrgtech Part No:
ET101079809
Warranty:
Manufacturer
$ 0.26 $ 0.26
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
2.7A
Maximum Drain Source Voltage Vds:
60V
Series:
HEXFET
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
92mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Typical Gate Charge Qg @ Vgs:
2.5nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
1.25W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
3.04mm
Height:
1.02mm
Width:
1.4 mm
Automotive Standard:
No
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0900766b80f35044.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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