Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF

Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF

Manufacturer:
Manufacturer Part No:
IRLML2060TRPBF
Enrgtech Part No:
ET101079808
Warranty:
Manufacturer
$ 0.30 $ 0.30
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
1.2A
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOT-23
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.83mm
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
1.25W
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
0.67nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
1.02mm
Length:
3.04mm
Width:
1.4 mm
Automotive Standard:
No
Distrelec Product Id:
304-45-313
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0900766b80f35047.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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