Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB60R045P7ATMA1

Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB60R045P7ATMA1

Manufacturer:
Manufacturer Part No:
IPB60R045P7ATMA1
Enrgtech Part No:
ET101058752
Warranty:
Manufacturer
$ 6.21 $ 6.21
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
273A
Maximum Drain Source Voltage Vds:
100V
Series:
iPB
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.7mΩ
Channel Mode:
N
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
80nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
81W
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
AEC-Q101
pdf icon
A700000008779480.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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