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ipd50n04s408atma1 Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1
ipd50n04s408atma1 Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1
ipd50n04s408atma1 Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1

Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1

Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD50N04S408ATMA1
Enrgtech Part No:
ET101056235
Warranty:
Manufacturer
$ 0.77 $ 0.77
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-252
Series:
OptiMOS-T2
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
7.9mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
17.2nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
46W
Maximum Operating Temperature:
175°C
Width:
6.22 mm
Height:
2.3mm
Length:
6.5mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
0900766b814d6cb3.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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