Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1

Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSP372NH6327XTSA1
Enrgtech Part No:
ET101056226
Warranty:
Manufacturer
$ 0.66 $ 0.66
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
1.8A
Maximum Drain Source Voltage Vds:
100V
Series:
OptiMOS
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
270mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
9.5nC
Maximum Power Dissipation Pd:
1.8W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Length:
6.5mm
Width:
3.5 mm
Height:
1.6mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
Distrelec Product Id:
304-36-977
pdf icon
0900766b814d6c6f.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews