Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

Manufacturer:
Manufacturer Part No:
BSS126H6327XTSA2
Enrgtech Part No:
ET101049328
Warranty:
Manufacturer
$ 0.38 $ 0.38
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
21mA
Maximum Drain Source Voltage Vds:
600V
Package Type:
SOT-23
Series:
499Ω
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
700Ω
Channel Mode:
Depletion
Maximum Power Dissipation Pd:
500mW
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
1.4nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Height:
1mm
Width:
1.3 mm
Standards/Approvals:
No
Length:
2.9mm
Distrelec Product Id:
304-45-303
Automotive Standard:
AEC-Q101
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0900766b814a9f2e.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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