siss5808dn-t1-ge3 Vishay SISS Type N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3

Vishay SISS Type N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3

For more information please check the datasheets.

Vishay SISS Type N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SISS5808DN-T1-GE3

Enrgtech Part No:

ET101037575

Warranty:

Manufacturer

$ 2.08

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

66.6A

Maximum Drain Source Voltage Vds:

80V

Package Type:

1212-8S

Series:

SISS

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.00745Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Power Dissipation Pd:

65.7W

A700000010766859.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SISS Type N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3

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