Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-252 IPD65R1K0CEAUMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-252 IPD65R1K0CEAUMA1

Manufacturer:
Manufacturer Part No:
IPD65R1K0CEAUMA1
Enrgtech Part No:
ET101027083
Warranty:
Manufacturer
$ 0.67 $ 0.67
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
7.2A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolMOS CE
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
15.3nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
68W
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
6.22 mm
Length:
6.73mm
Height:
2.41mm
Automotive Standard:
No
pdf icon
A700000007726675.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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