Infineon CoolMOS P7 Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R750P7ATMA1

Infineon CoolMOS P7 Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R750P7ATMA1

Manufacturer:
Manufacturer Part No:
IPD80R750P7ATMA1
Enrgtech Part No:
ET101027064
Warranty:
Manufacturer
$ 1.22 $ 1.22
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
7A
Maximum Drain Source Voltage Vds:
800V
Series:
CoolMOS P7
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
750mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
51W
Forward Voltage Vf:
0.9V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
17nC
Maximum Operating Temperature:
150°C
Length:
6.73mm
Height:
2.41mm
Standards/Approvals:
No
Width:
6.22 mm
Automotive Standard:
No
pdf icon
A700000007726635.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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