Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S404ATMA1

For more information please check the datasheets.

Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S404ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB120N08S404ATMA1

Enrgtech Part No:

ET101027010

Warranty:

Manufacturer

$ 4.72

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

120A

Maximum Drain Source Voltage Vds:

80V

Package Type:

TO-263

Series:

OptiMOS-T2

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

6.8 A, 7.8 A

Channel Mode:

Enhancement

Standards/Approvals:

Automotive Standard:

AEC-Q101

A700000007726396.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S404ATMA1

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