Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1

Manufacturer:
Manufacturer Part No:
IPS80R900P7AKMA1
Enrgtech Part No:
ET101026433
Warranty:
Manufacturer
$ 1.19 $ 1.19
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-251
Series:
CoolMOS P7
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
900mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
45W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
15nC
Maximum Operating Temperature:
150°C
Length:
6.7mm
Height:
330µF
Width:
2.35 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007726211.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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