Infineon HEXFET Type N-Channel MOSFET, 42 A, 40 V Enhancement, 3-Pin TO-252 IRFR4104TRLPBF

Infineon HEXFET Type N-Channel MOSFET, 42 A, 40 V Enhancement, 3-Pin TO-252 IRFR4104TRLPBF

Manufacturer:
Manufacturer Part No:
IRFR4104TRLPBF
Enrgtech Part No:
ET101026401
Warranty:
Manufacturer
$ 1.66 $ 1.66
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
42A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
5.5mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
140W
Typical Gate Charge Qg @ Vgs:
59nC
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Length:
6.73mm
Height:
330µF
Standards/Approvals:
No
Width:
2.39 mm
Automotive Standard:
No
pdf icon
A700000007726348.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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