Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-251 IPS65R1K0CEAKMA2

Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-251 IPS65R1K0CEAKMA2

Manufacturer:
Manufacturer Part No:
IPS65R1K0CEAKMA2
Enrgtech Part No:
ET101026288
Warranty:
Manufacturer
$ 0.73 $ 0.73
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
7.2A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-251
Series:
CoolMOS CE
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
37W
Typical Gate Charge Qg @ Vgs:
15.3nC
Minimum Operating Temperature:
-40°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Length:
6.73mm
Standards/Approvals:
No
Height:
330µF
Width:
2.4 mm
Automotive Standard:
No
pdf icon
A700000007726115.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews