Infineon OptiMOS Type N-Channel MOSFET, 126 A, 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1

Infineon OptiMOS Type N-Channel MOSFET, 126 A, 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1

Manufacturer:
Manufacturer Part No:
BSZ025N04LSATMA1
Enrgtech Part No:
ET101018192
Warranty:
Manufacturer
$ 1.48 $ 1.48
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
126A
Maximum Drain Source Voltage Vds:
40V
Series:
OptiMOS
Package Type:
TSDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
2.5mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Typical Gate Charge Qg @ Vgs:
37nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
69W
Maximum Operating Temperature:
150°C
Width:
6.1 mm
Length:
5.35mm
Height:
1.2mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007726316.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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