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bsc0910ndiatma1 Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1
bsc0910ndiatma1 Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1

Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1

Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSC0910NDIATMA1
Enrgtech Part No:
ET101018082
Warranty:
Manufacturer
$ 1.32 $ 1.32
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
40A
Maximum Drain Source Voltage Vds:
25V
Package Type:
TISON-8
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
5.9mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2.5W
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Forward Voltage Vf:
0.87V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
10 V
Maximum Operating Temperature:
150°C
Transistor Configuration:
Dual
Length:
5mm
Height:
1.1mm
Width:
6 mm
Standards/Approvals:
RoHS, IEC61249-2-21, JEDEC1
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000007726627.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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