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irfp2907pbf Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247 IRFP2907PBF
irfp2907pbf Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247 IRFP2907PBF
irfp2907pbf Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247 IRFP2907PBF

Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247 IRFP2907PBF

Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247 IRFP2907PBF

Manufacturer:
Infineon
Manufacturer Part No:
IRFP2907PBF
Enrgtech Part No:
ET101007115
Warranty:
Manufacturer
$ 3.96 $ 3.96
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
209A
Maximum Drain Source Voltage Vds:
75V
Package Type:
TO-247
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
5mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
410nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
470W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
15.9mm
Standards/Approvals:
No
Height:
20.3mm
Width:
5.3 mm
Distrelec Product Id:
30341348
Automotive Standard:
No
pdf icon
0900766b80791218.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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