sihk125n60ef-t1ge3 Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

For more information please check the datasheets.

Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIHK125N60EF-T1GE3

Enrgtech Part No:

ET101004902

Warranty:

Manufacturer

$ 5.76

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

21A

Maximum Drain Source Voltage Vds:

650V

Series:

SIHK

Package Type:

PowerPAK 10 x 12

Mount Type:

PCB

Pin Count:

Maximum Drain Source Resistance Rds:

0.125Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Power Dissipation Pd:

132W

A700000009890819.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

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