Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3

Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3

Manufacturer:
Manufacturer Part No:
SIHP085N60EF-GE3
Enrgtech Part No:
ET101004898
Warranty:
Manufacturer
$ 9.28 $ 9.28
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
34A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-220AB
Series:
SIHP
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.084Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
184W
Typical Gate Charge Qg @ Vgs:
8.38mm
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000009889881.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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