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sihk045n60ef-t1ge3 Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
sihk045n60ef-t1ge3 Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
sihk045n60ef-t1ge3 Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
sihk045n60ef-t1ge3 Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3

Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3

Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHK045N60EF-T1GE3
Enrgtech Part No:
ET101004864
Warranty:
Manufacturer
$ 12.06 $ 12.06
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
47A
Maximum Drain Source Voltage Vds:
650V
Series:
SIHK
Package Type:
PowerPAK 10 x 12
Mount Type:
PCB
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.052Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
105nC
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Maximum Power Dissipation Pd:
278W
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Length:
9.9mm
Automotive Standard:
No
pdf icon
A700000009890815.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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