Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

Manufacturer:
Manufacturer Part No:
SIHK085N60EF-T1GE3
Enrgtech Part No:
ET101004859
Warranty:
Manufacturer
$ 11.80 $ 11.80
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
650V
Series:
SIHK
Package Type:
PowerPAK 10 x 12
Mount Type:
PCB
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.085Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
184W
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Typical Gate Charge Qg @ Vgs:
8.38mm
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
9.9mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000009890912.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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