Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

Manufacturer:
Manufacturer Part No:
SIHH085N60EF-T1GE3
Enrgtech Part No:
ET101004855
Warranty:
Manufacturer
$ 11.75 $ 11.75
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
650V
Package Type:
PowerPAK 8 x 8
Series:
SIHH
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
0.085Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Maximum Power Dissipation Pd:
184W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
8.38mm
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
8mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000009889865.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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