siss5710dn-t1-ge3 Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

For more information please check the datasheets.

Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SISS5710DN-T1-GE3

Enrgtech Part No:

ET101004787

Warranty:

Manufacturer

$ 2.54

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

26.2A

Maximum Drain Source Voltage Vds:

150V

Series:

SISS

Package Type:

PowerPAK 1212-8S

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.0315Ω

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

12nC

Minimum Operating Temperature:

-55°C

A700000009890799.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

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