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irf1404pbf Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB IRF1404PBF
irf1404pbf Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB IRF1404PBF
irf1404pbf Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB IRF1404PBF
irf1404pbf Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB IRF1404PBF

Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB IRF1404PBF

Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB IRF1404PBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF1404PBF
Enrgtech Part No:
ET100987556
Warranty:
Manufacturer
$ 2.74 $ 2.74
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Product Type:
Power MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
202A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-220AB
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.004Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
131nC
Forward Voltage Vf:
1.5V
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
333W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
10.67mm
Height:
8.77mm
Width:
EH Connector Housing
Automotive Standard:
No
Distrelec Product Id:
30284006
pdf icon
0900766b807910da.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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