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irf1405pbf Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF
irf1405pbf Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF
irf1405pbf Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF
irf1405pbf Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF

Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF

Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF1405PBF
Enrgtech Part No:
ET100987514
Warranty:
Manufacturer
$ 2.52 $ 2.52
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
169A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
5mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
8 Kbyte
Maximum Power Dissipation Pd:
330W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Length:
10.67mm
Height:
8.77mm
Standards/Approvals:
No
Width:
EH Connector Housing
Automotive Standard:
No
pdf icon
0900766b807910db.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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