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iqe030n06nm5cgscatma1 Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
iqe030n06nm5cgscatma1 Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IQE030N06NM5CGSCATMA1
Enrgtech Part No:
ET100970239
Warranty:
Manufacturer
$ 2.17 $ 2.17
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
132A
Maximum Drain Source Voltage Vds:
60V
Package Type:
PG-WHTFN-9
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
9
Maximum Drain Source Resistance Rds:
3mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
100W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
39nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Standards/Approvals:
IEC61249-2-21, RoHS, JEDEC
Automotive Standard:
No
pdf icon
A700000012711810.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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