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imt65r048m1hxuma1 Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
imt65r048m1hxuma1 Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IMT65R048M1HXUMA1
Enrgtech Part No:
ET100970188
Warranty:
Manufacturer
$ 7.67 $ 7.67
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
650V
Package Type:
PG-HSOF-8
Series:
CoolSiC MOSFET 650 V G1
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
64mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3 x 1 x 2mm
Maximum Power Dissipation Pd:
ZNR
Maximum Gate Source Voltage Vgs:
23 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000012710144.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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