Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

For more information please check the datasheets.

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

Manufacturer:

Infineon

Manufacturer Part No:

IMT65R057M1HXUMA1

Enrgtech Part No:

ET100970184

Warranty:

Manufacturer

$ 6.74

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

44A

Maximum Drain Source Voltage Vds:

650V

Series:

CoolSiC MOSFET 650 V G1

Package Type:

PG-HSOF-8

Mount Type:

Surface

Pin Count:

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Typical Gate Charge Qg @ Vgs:

28nC

Maximum Power Dissipation Pd:

203W

A700000012710186.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

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